2N7002,215
Nexperia USA Inc.
- Lifecycle
- Active
- Stock
- 6582 Stückzahl
- Package
- SOT-23-3
- Series
- Transistoren von FETs, MOSFETs von Single
Dieser detaillierte Vergleich von 2N7002,215 und 2N7002K bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.
Replacement verdict
The 2N7002K and 2N7002,215 are both N-channel enhancement-mode MOSFETs in SOT-23 packages with matched voltage and current ratings, making the 2N7002K a viable functional replacement for the 2N7002,215 in most low-power switching applications. Designers should verify gate threshold voltage tolerance and thermal derating against their specific circuit requirements before committing to a drop-in substitution.
Nexperia USA Inc.
Rectron USA
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Use manufacturer datasheets as the final authority.
| Specification | 2N7002,215 | 2N7002K |
|---|---|---|
| Series | TrenchMOS™ | - |
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 300mA (Ta) | 300mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V | 5V, 10V |
| Rds On(Max) @ Id Vgs | 5Ohm @ 500mA, 10V | 2Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 1.9V @ 250µA |
| Vgs(Max) | ±30V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 50 pF @ 10 V | 50 pF @ 25 V |
| Power Dissipation (Max) | 830mW (Ta) | 350mW (Ta) |
| Operating Temperature | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |