2N7002,215
Nexperia USA Inc.
- Lifecycle
- Active
- Stock
- 6582 Stückzahl
- Package
- SOT-23-3
- Series
- Transistoren von FETs, MOSFETs von Single
Dieser detaillierte Vergleich von 2N7002,215 und 2N7002LT1G bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.
Replacement verdict
The 2N7002LT1G and 2N7002,215 are functionally equivalent N-channel MOSFETs with matching voltage, current, and package ratings, making them suitable drop-in replacements for most designs. Minor differences in package marking and supplier-specific specifications should be validated against the target application requirements.
Nexperia USA Inc.
Onsemi
Send your BOM and application constraints for technical and sourcing review.
Use manufacturer datasheets as the final authority.
| Specification | 2N7002,215 | 2N7002LT1G |
|---|---|---|
| Series | TrenchMOS™ | - |
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 300mA (Ta) | 115mA (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V | 5V, 10V |
| Rds On(Max) @ Id Vgs | 5Ohm @ 500mA, 10V | 7.5Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA |
| Vgs(Max) | ±30V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 50 pF @ 10 V | 50 pF @ 25 V |
| Power Dissipation (Max) | 830mW (Ta) | 225mW (Ta) |
| Operating Temperature | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |