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TK12V60W,LVQ
+StücklisteMOSFET N-CH 600V 11.5A 4DFN
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HerstellerToshiba Halbleiter und Speicher
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Herstellerteil #TK12V60W,LVQ
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Auf Lager9238
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Toshiba Semiconductor and Storage |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | DTMOSIV |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 11.5A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 300mOhm @ 5.8A, 10V |
| Vgs(th)(Max) @ Id | 3.7V @ 600µA |
| Gate Charge(Qg)(Max) @ Vgs | 25 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 890 pF @ 300 V |
| FET Feature | Super Junction |
| Power Dissipation (Max) | 104W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-DFN-EP (8x8) |
