TK42E12N1,S1X

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TK42E12N1,S1X

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MOSFET N CH 120V 88A TO-220

  • HerstellerToshiba Halbleiter und Speicher

  • Herstellerteil #TK42E12N1,S1X

  • Auf Lager7451

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Spezifikationen

Attribut Wert
Supplier Toshiba Semiconductor and Storage
Package / Case Tube
Series U-MOSVIII-H
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120 V
Current - Continuous Drain(Id) @ 25°C 88A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 9.4mOhm @ 21A, 10V
Vgs(th)(Max) @ Id 4V @ 1mA
Gate Charge(Qg)(Max) @ Vgs 52 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 3100 pF @ 60 V
Power Dissipation (Max) 140W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220

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