Abbildungen dienen nur als Referenz
TK6Q65W,S1Q
+StücklisteMOSFET N-CH 650V 5.8A IPAK
-
HerstellerToshiba Halbleiter und Speicher
-
Herstellerteil #TK6Q65W,S1Q
-
Datenblatt TK6Q65W,S1Q DataSheet
-
Auf Lager2096
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Toshiba Semiconductor and Storage |
| Package / Case | Tube |
| Series | DTMOSIV |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 5.8A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 1.05Ohm @ 2.9A, 10V |
| Vgs(th)(Max) @ Id | 3.5V @ 180µA |
| Gate Charge(Qg)(Max) @ Vgs | 11 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 390 pF @ 300 V |
| Power Dissipation (Max) | 60W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I-Pak |
