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TK3A60DA(STA4,Q,M)
+StücklisteMOSFET N-CH 600V 2.5A TO220SIS
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HerstellerToshiba Halbleiter und Speicher
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Herstellerteil #TK3A60DA(STA4,Q,M)
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Datenblatt TK3A60DA(STA4,Q,M) DataSheet
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Auf Lager2498
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Spezifikationen
| Attribut | Wert |
| Supplier | Toshiba Semiconductor and Storage |
| Package / Case | Tube |
| Series | π-MOSVII |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 2.5A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 2.8Ohm @ 1.3A, 10V |
| Vgs(th)(Max) @ Id | 4.4V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 9 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 380 pF @ 25 V |
| Power Dissipation (Max) | 30W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220SIS |
