Abbildungen dienen nur als Referenz
TK5A53D(STA4,Q,M)
+StücklisteMOSFET N-CH 525V 5A TO220SIS
-
HerstellerToshiba Halbleiter und Speicher
-
Herstellerteil #TK5A53D(STA4,Q,M)
-
Datenblatt TK5A53D(STA4,Q,M) DataSheet
-
Auf Lager7249
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Toshiba Semiconductor and Storage |
| Package / Case | Tube |
| Series | π-MOSVII |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 525 V |
| Current - Continuous Drain(Id) @ 25°C | 5A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 1.5Ohm @ 2.5A, 10V |
| Vgs(th)(Max) @ Id | 4.4V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 11 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 540 pF @ 25 V |
| Power Dissipation (Max) | 35W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220SIS |
