2N7002 vs 2N7002E-T1-E3

Dieser detaillierte Vergleich von 2N7002 und 2N7002E-T1-E3 bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002E-T1-E3 is a functionally compatible replacement candidate for the 2N7002, sharing the same N-channel enhancement-mode MOSFET architecture, SOT-23 package, and 60 V drain-source rating. Designers should validate gate threshold voltage tolerance and on-resistance at the intended operating point before committing to production, as these parameters may shift switching behavior in sensitive circuits.

Drain-Source Voltage Rating High match
Package Type High match
On-Resistance Validation required
Gate Threshold Voltage Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002

STMikroelektronik

Lifecycle
Active
Stock
1470 Stückzahl
Package
SOT-23
Series
Transistoren von FETs, MOSFETs von Single
+Stückliste Anfrage
Part B

2N7002E-T1-E3

Vishay Siliconix

Lifecycle
Active
Stock
7566 Stückzahl
Package
SOT-23-3
Series
Transistoren von FETs, MOSFETs von Single
+Stückliste Anfrage

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002 2N7002E-T1-E3
Part Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 200mA (Tc) 240mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On(Max) @ Id Vgs 5Ohm @ 500mA, 10V 3Ohm @ 250mA, 10V
Vgs(th)(Max) @ Id 3V @ 250µA 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 2 nC @ 5 V 0.6 nC @ 4.5 V
Vgs(Max) ±18V ±20V
Input Capacitance(Ciss)(Max) @ Vds 43 pF @ 25 V 21 pF @ 5 V
Power Dissipation (Max) 350mW (Tc) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Series STripFET™ -
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