Part A
2N7002K
Rectron USA
- Lifecycle
- Active
- Stock
- 3271 Stückzahl
- Package
- SOT-23
- Series
- Transistoren von FETs, MOSFETs von Single
Replacement verdict
Compatible functional replacement candidate
The 2N7002K is a functionally compatible replacement candidate for the 2N7002 in most low-power switching applications, with identical package footprint, pinout, and gate-drive characteristics. Designers should validate gate-threshold-sensitive and ESD-exposed circuits before committing to volume production.
Package Type
High match
Drain-Source Voltage Rating
High match
Continuous Drain Current
Validation required
Gate Threshold Voltage
Validation required
Parts at a glance
Part B
2N7002
STMikroelektronik
- Lifecycle
- Active
- Stock
- 1470 Stückzahl
- Package
- SOT-23
- Series
- Transistoren von FETs, MOSFETs von Single
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002 | 2N7002K | Why it matters |
|---|---|---|---|
| Drain-Source Voltage (Vds) | 60 V | 60 V | Defines the maximum voltage the device can block; identical ratings mean both can be used in the same voltage rails. |
| Continuous Drain Current (Id) | 115 mA (at 25°C) | 300 mA (at 25°C) | Higher current capability in the 2N7002K allows it to drive heavier loads or provide more margin in the same circuit. |
| Drain-Source On-Resistance (Rds(on)) | 7.5 Ω max at Vgs=10V, Id=0.5A | 1.6 Ω max at Vgs=10V, Id=0.5A | Lower Rds(on) reduces conduction losses and voltage drop, improving efficiency and allowing higher current in the same package. |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V min, 2.5 V max | 1.0 V min, 2.5 V max | Determines the minimum gate voltage needed to turn the device on; matching thresholds ensures compatible logic-level drive. |
| Gate-Source Voltage (Vgs) Max | ±20 V | ±20 V | Sets the safe gate drive limit; identical ratings mean the same gate drive circuitry can be used. |
| Power Dissipation (Pd) | 200 mW (at 25°C) | 350 mW (at 25°C) | Higher power dissipation in the 2N7002K allows it to handle more thermal load without exceeding junction temperature limits. |
| Input Capacitance (Ciss) | 50 pF typ at Vds=25V | 50 pF typ at Vds=25V | Affects switching speed and gate drive requirements; identical values mean similar dynamic performance. |
| Package | SOT-23 (TO-236) | SOT-23 (TO-236) | Same footprint allows direct drop-in replacement without PCB layout changes. |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 60 V min at Id=10µA | 60 V min at Id=250µA | Test current differs, but both guarantee 60 V minimum blocking; the 2N7002K test is more stringent, indicating tighter process control. |
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002K | 2N7002 |
|---|---|---|
| Part Status | Active | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 300mA (Ta) | 200mA (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 2Ohm @ 500mA, 10V | 5Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 1.9V @ 250µA | 3V @ 250µA |
| Vgs(Max) | ±20V | ±18V |
| Input Capacitance(Ciss)(Max) @ Vds | 50 pF @ 25 V | 43 pF @ 25 V |
| Power Dissipation (Max) | 350mW (Ta) | 350mW (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Series | - | STripFET™ |
| Gate Charge(Qg)(Max) @ Vgs | - | 2 nC @ 5 V |
Frequently asked questions
What are the key differences between the 2N7002 and 2N7002K N-channel MOSFETs?
Both are 60 V, 300 mA N-channel enhancement-mode MOSFETs in SOT-23 packages. The 2N7002K is a later-generation variant that typically features a lower maximum gate threshold voltage (VGS(th)) and improved RDS(on) characteristics compared to the original 2N7002. The 2N7002K is often specified with a VGS(th) range of 1.0 V to 2.5 V, while the 2N7002 is commonly specified at 1.0 V to 2.5 V as well, but exact limits vary by manufacturer. Always consult the specific manufacturer datasheet for guaranteed parameters.
Are the 2N7002 and 2N7002K pin-compatible and package-compatible?
Yes. Both devices are offered in the standard SOT-23 (TO-236) package with the same pinout: Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain. This allows direct PCB footprint compatibility when both parts are in the same package type.
Can the 2N7002K be used as a direct drop-in replacement for the 2N7002?
In many low-voltage, low-current switching applications, the 2N7002K can replace the 2N7002 because both share the same package, pinout, and basic voltage/current ratings. However, because gate threshold voltage, RDS(on), and input capacitance can differ between manufacturers and variants, the replacement should be validated against the specific circuit requirements and the manufacturer datasheet before production use.
What is the maximum drain-source voltage (VDS) rating for the 2N7002 and 2N7002K?
Both the 2N7002 and 2N7002K are rated for a maximum drain-source voltage (VDS) of 60 V. This rating is consistent across major manufacturers such as ON Semiconductor (onsemi), Nexperia, and Diodes Incorporated.
What is the continuous drain current (ID) rating for the 2N7002 and 2N7002K?
Both devices are typically rated for a continuous drain current (ID) of 300 mA at 25°C ambient temperature, with power dissipation limited by the SOT-23 package. Some manufacturers may specify slightly different current ratings depending on test conditions, so the exact datasheet should be consulted.
Do the 2N7002 and 2N7002K have the same gate threshold voltage (VGS(th))?
Not necessarily. While both are specified with a VGS(th) range that typically spans from 1.0 V to 2.5 V, the 2N7002K is often characterized with a tighter or lower threshold range by some manufacturers. For example, onsemi specifies the 2N7002K with VGS(th) between 1.0 V and 2.5 V at VDS = VGS and ID = 250 µA. The original 2N7002 may have a wider or slightly different range depending on the manufacturer. Always verify with the specific datasheet.
Are the RDS(on) characteristics different between the 2N7002 and 2N7002K?
Yes, RDS(on) can differ. The 2N7002K is generally optimized for lower on-resistance at low gate drive voltages. For example, at VGS = 10 V and ID = 500 mA, the 2N7002K may specify RDS(on) as low as 1.2 Ω to 2.0 Ω, while the original 2N7002 may specify 1.8 Ω to 5.0 Ω depending on the manufacturer. These values are not universal and must be confirmed from the relevant datasheet.
What are the typical applications for the 2N7002 and 2N7002K?
Both devices are commonly used for low-power switching, level shifting, small-signal amplification, and interfacing logic circuits with higher-voltage loads. The 2N7002K is often preferred in designs requiring lower threshold voltage and improved RDS(on) at low gate drive, such as battery-powered or 3.3 V logic systems.
Do the 2N7002 and 2N7002K have the same input capacitance and switching characteristics?
No. Input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) can vary between the two variants and among manufacturers. The 2N7002K typically has different capacitance values due to its optimized die design. Switching times (td(on), tr, td(off), tf) also depend on these capacitances and the test circuit. Consult the specific manufacturer datasheet for accurate switching parameters.