2N7002ET1G vs 2N7002LT1G

Dieser detaillierte Vergleich von 2N7002ET1G und 2N7002LT1G bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002ET1G is a compatible functional replacement candidate for the 2N7002LT1G in most low-voltage switching applications, with equivalent drain-source voltage, continuous drain current, and package footprint. Designers should validate gate threshold voltage tolerance and on-resistance characteristics against circuit requirements before finalizing the substitution.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Gate Threshold Voltage Validation required
On-Resistance Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002ET1G

Onsemi

Lifecycle
Active
Stock
4059 Stückzahl
Package
SOT-23-3
Series
Transistoren von FETs, MOSFETs von Single
+Stückliste Anfrage
Part B

2N7002LT1G

Onsemi

Lifecycle
Active
Stock
7047 Stückzahl
Package
SOT-23-3
Series
Transistoren von FETs, MOSFETs von Single
+Stückliste Anfrage

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002ET1G 2N7002LT1G
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 260mA (Ta) 115mA (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 5V, 10V
Rds On(Max) @ Id Vgs 2.5Ohm @ 240mA, 10V 7.5Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 0.81 nC @ 5 V -
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 26.7 pF @ 25 V 50 pF @ 25 V
Power Dissipation (Max) 300mW (Tj) 225mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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