2N7002K
Rectron USA
- Lifecycle
- Active
- Stock
- 3271 Stückzahl
- Package
- SOT-23
- Series
- Transistoren von FETs, MOSFETs von Single
Dieser detaillierte Vergleich von 2N7002K und 2N7002LT1G bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.
Replacement verdict
The 2N7002K is a compatible functional replacement candidate for the 2N7002LT1G in most low-power switching applications, with matching voltage ratings, current handling, and package footprint. Designers should validate gate threshold spread and thermal margins in the target circuit before committing to production.
Rectron USA
Onsemi
Send your BOM and application constraints for technical and sourcing review.
Use manufacturer datasheets as the final authority.
| Specification | 2N7002K | 2N7002LT1G |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 300mA (Ta) | 115mA (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V | 5V, 10V |
| Rds On(Max) @ Id Vgs | 2Ohm @ 500mA, 10V | 7.5Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 1.9V @ 250µA | 2.5V @ 250µA |
| Vgs(Max) | ±20V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 50 pF @ 25 V | 50 pF @ 25 V |
| Power Dissipation (Max) | 350mW (Ta) | 225mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |