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G2R1000MT17J
+StücklisteSIC MOSFET N-CH 3A TO263-7
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HerstellerGeneSiC Halbleiter
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Herstellerteil #G2R1000MT17J
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Spezifikationen
| Attribut | Wert |
| Supplier | GeneSiC Semiconductor |
| Package / Case | Tube |
| Series | G2R™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Current - Continuous Drain(Id) @ 25°C | 3A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 20V |
| Rds On(Max) @ Id Vgs | 1.2Ohm @ 2A, 20V |
| Vgs(th)(Max) @ Id | 4V @ 2mA |
| Vgs(Max) | +20V, -10V |
| Input Capacitance(Ciss)(Max) @ Vds | 139 pF @ 1000 V |
| Power Dissipation (Max) | 54W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263-7 |
