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G3R450MT17J
+StücklisteSIC MOSFET N-CH 9A TO263-7
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HerstellerGeneSiC Halbleiter
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Herstellerteil #G3R450MT17J
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Spezifikationen
| Attribut | Wert |
| Supplier | GeneSiC Semiconductor |
| Package | Tube |
| Series | G3R™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 1700 V |
| Current-ContinuousDrain(Id)@25°C | 9A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 15V |
| RdsOn(Max)@IdVgs | 585mOhm @ 4A, 15V |
| Vgs(th)(Max)@Id | 2.7V @ 2mA |
| GateCharge(Qg)(Max)@Vgs | 18 nC @ 15 V |
| Vgs(Max) | ±15V |
| InputCapacitance(Ciss)(Max)@Vds | 454 pF @ 1000 V |
| PowerDissipation(Max) | 91W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-263-7 |
