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G3R12MT12K
+Stückliste1200V 12M TO-247-4 G3R SIC MOSFE
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HerstellerGeneSiC Halbleiter
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Herstellerteil #G3R12MT12K
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Spezifikationen
| Attribut | Wert |
| Supplier | GeneSiC Semiconductor |
| Package | Tube |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| Current-ContinuousDrain(Id)@25°C | 157A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 15V, 18V |
| RdsOn(Max)@IdVgs | 13mOhm @ 100A, 18V |
| Vgs(th)(Max)@Id | 2.7V @ 50mA |
| GateCharge(Qg)(Max)@Vgs | 288 nC @ 15 V |
| Vgs(Max) | +22V, -10V |
| InputCapacitance(Ciss)(Max)@Vds | 9335 pF @ 800 V |
| PowerDissipation(Max) | 567W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-4 |
