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G2R50MT33K
+Stückliste3300V 50M TO-247-4 SIC MOSFET
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HerstellerGeneSiC Halbleiter
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Herstellerteil #G2R50MT33K
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Spezifikationen
| Attribut | Wert |
| Supplier | GeneSiC Semiconductor |
| Package | Tube |
| Series | G2R™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 3300 V |
| Current-ContinuousDrain(Id)@25°C | 63A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 20V |
| RdsOn(Max)@IdVgs | 50mOhm @ 40A, 20V |
| Vgs(th)(Max)@Id | 3.5V @ 10mA (Typ) |
| GateCharge(Qg)(Max)@Vgs | 340 nC @ 20 V |
| Vgs(Max) | +25V, -10V |
| InputCapacitance(Ciss)(Max)@Vds | 7301 pF @ 1000 V |
| FETFeature | Standard |
| PowerDissipation(Max) | 536W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-4 |
